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this is information on a product in full production. august 2013 docid16246 rev 2 1/16 STL3NK40 n-channel 400 v, 4.5 typ., 0.43 a, supermesh? power mosfet in a powerflat? 5x5 package datasheet - production data figure 1. internal schematic diagram features ? extremely high dv/dt capability ? 100% avalanche rated ? gate charge minimized ? very low intrinsic capacitances applications ? switching applications description this device is an n-channel power mosfet developed using stmicroelectronics' supermesh? technology, achieved through optimization of st's well established strip-based powermesh? layout. in addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. powerflat? 5x5 1 4 5 7 8 11 12 14 1 4 12 7 6 5 11 10 type c type s s 2 s 3 s 4 5 d 6 d d 12 d 11 10 g 9 8 s 7 s pin 1 drain (not connected) am16048v1 s pin 1 drain s 2 s 3 s 4 (not connected) d 14 d 13 d 12 11 g 10 s 9 s 8 s 5 d 6 d 7 d type c type s order code v ds r ds(on) max i d p tot STL3NK40 400 v 5.5 0.43 a 2.5 w table 1. device summary order code marking packages packaging STL3NK40 3nk40 powerflat? 5x5 tape and reel www.st.com
contents STL3NK40 2/16 docid16246 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid16246 rev 2 3/16 STL3NK40 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 400 v v dgr drain-gate voltage (r gs = 20 k ) 400 v v gs gate- source voltage 20 v i d (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu (t < 100 s) drain current (continuous) at t pcb = 25 c 0.43 a drain current (continuous) at t pcb = 100 c 0.27 a i dm (1) drain current (pulsed) 1.72 a p tot (1) total dissipation at t c = 25 c 2.5 w dv/dt (2) 2. i sd < 0.43 a, di/dt< 200 a/s, v dd < 320 v peak diode recovery voltage slope 4.5 v/ns t stg t j storage temperature max. operating junction temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu (t < 100 s) thermal resistance junction-pcb 50 c/w table 4. avalanche data symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 0.43 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 60 mj
electrical characteristics STL3NK40 4/16 docid16246 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 400 v i dss zero gate voltage drain current (v gs = 0) v ds = 400 v v ds = 400 v, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 0.8 1.6 2 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 0.22 a 4.5 5.5 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 10 v, i d = 0.43 a - 1.2 s c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 128 200 pf c oss output capacitance - 16 30 pf c rss reverse transfer capacitance -46pf r g gate input resistance f= 1 mhz gate dc bias = 0 test signal level = 20 mv open drain -12 q g total gate charge v dd = 320 v, i d = 1.4 a, v gs = 10 v (see figure 10) - 8.7 13 nc q gs gate-source charge - 0.9 nc q gd gate-drain charge - 3.8 nc
docid16246 rev 2 5/16 STL3NK40 electrical characteristics 16 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 200 v, i d = 0.7 a, r g =4.7 , v gs = 10 v (see figure 14) -3-ns t r rise time - 4 - ns t d(off) turn-off-delay time - 18 - ns t f fall time - 16 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 0.43 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 1.72 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 0.43 a, v gs = 0 - 1.2 v t rr reverse recovery time i sd = 1.4 a, di/dt = 100 a/s v dd = 20 v (see figure 19) - 166 ns q rr reverse recovery charge - 300 nc i rrm reverse recovery current - 3.6 a t rr reverse recovery time i sd = 1.4 a, di/dt = 100 a/s v dd = 20 v, t j = 150 c (see figure 19) - 176 ns q rr reverse recovery charge - 340 nc i rrm reverse recovery current - 3.8 a
electrical characteristics STL3NK40 6/16 docid16246 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. saturation characteristics figure 5. transfer characteristics figure 6. output characteristics figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 100ms 1s tj=150c tc=25c sinlge pulse am05476v1 r ds(on) 5 4 3 2 0.1 0.5 i d (a) ( ) 0.3 0.7 6 7 0.9 1.1 1.3 am05477v1
docid16246 rev 2 7/16 STL3NK40 electrical characteristics 16 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. transconductance figure 11. normalized v (br)dss vs temperature figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v ds =320v i d =1.4a v ds =320v i d =2a am05478v1 c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am05479v1
test circuits STL3NK40 8/16 docid16246 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid16246 rev 2 9/16 STL3NK40 package mechanical data 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL3NK40 10/16 docid16246 rev 2 figure 20. powerflat? 5x5 type c mechanical drawing table 9. powerflat? 5x5 type c mechanical dimensions dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.002 0.05 a3 0.24 d 4.90 5.00 5.10 e 4.90 5.00 5.10 e 1.22 1.27 1.32 b 0.43 0.51 0.58 e2 2.49 2.57 2.64 c 0.64 0.71 0.79 7267096_rev_g
docid16246 rev 2 11/16 STL3NK40 package mechanical data 16 figure 21. powerflat? 5x5 type c recommended footprint (mm) 7267096_footprint_rev_g
package mechanical data STL3NK40 12/16 docid16246 rev 2 table 10. powerflat? 5x5 type s mechanical dimensions dim. mm min. typ. max. a 0.80 1.0 a1 0.02 0.05 a2 0.25 b0.30 0.50 d5.00 d1 4.05 4.25 e5.00 e1 0.64 0.79 e2 2.25 2.45 e1.27 l0.45 0.75
docid16246 rev 2 13/16 STL3NK40 package mechanical data 16 figure 22. powerflat? 5x5 type s mechanical drawing 8365434_a_type_s 10 9 8 7 1234 6 5 11 12 pin 1 identification
package mechanical data STL3NK40 14/16 docid16246 rev 2 figure 23. powerflat? 5x5 type s recommended footprint (dimensions are in mm) 8365434_a
docid16246 rev 2 15/16 STL3NK40 revision history 16 5 revision history table 11. document revision history date revision changes 18-sep-2009 1 first release 29-aug-2013 2 ? updated: section 4: package mechanical data ? minor text changes
STL3NK40 16/16 docid16246 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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